Invention Grant
- Patent Title: Electrode structure for vertical group III-V device
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Application No.: US16884292Application Date: 2020-05-27
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Publication No.: US11450749B2Publication Date: 2022-09-20
- Inventor: Yao-Chung Chang , Chun Lin Tsai , Ru-Yi Su , Wei Wang , Wei-Chen Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/66 ; H01L29/20 ; H01L29/205 ; H01L29/778 ; H01L29/868

Abstract:
Various embodiments of the present disclosure are directed towards a semiconductor structure including a buffer layer disposed between an active layer and a substrate. The active layer overlies the substrate. The substrate and the buffer layer include a plurality of pillar structures that extend vertically from a bottom surface of the active layer in a direction away from the active layer. A top electrode overlies an upper surface of the active layer. A bottom electrode underlies the substrate. The bottom electrode includes a conductive body and a plurality of conductive structures that respectively extend continuously from the conductive body, along sidewalls of the pillar structures, to a lower surface of the active layer.
Public/Granted literature
- US20210376090A1 ELECTRODE STRUCTURE FOR VERTICAL GROUP III-V DEVICE Public/Granted day:2021-12-02
Information query
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