Invention Grant
- Patent Title: IGBT power device and fabrication method therefor
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Application No.: US16966071Application Date: 2019-01-30
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Publication No.: US11450763B2Publication Date: 2022-09-20
- Inventor: Wei Liu , Lei Liu , Zhendong Mao , Yuanlin Yuan
- Applicant: Suzhou Oriental Semiconductor Co., Ltd.
- Applicant Address: CN Jiangsu
- Assignee: Suzhou Oriental Semiconductor Co., Ltd.
- Current Assignee: Suzhou Oriental Semiconductor Co., Ltd.
- Current Assignee Address: CN Jiangsu
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: CN201810132904.8 20180209
- International Application: PCT/CN2019/073915 WO 20190130
- International Announcement: WO2019/154219 WO 20190815
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L29/40
Abstract:
Provided is an IGBT power device. The device includes: a p-type collector region; an n-type drift region located above the p-type collector region; multiple first grooves, where a second groove is provided below each of the multiple first grooves; a gate structure located in the first groove and the second groove; a p-type body region located between two adjacent first grooves; an n-type emitter region located in the p-type body region; and an n-type hole charge blocking region located between two adjacent second grooves.
Public/Granted literature
- US20210036135A1 IGBT POWER DEVICE AND FABRICATION METHOD THEREFOR Public/Granted day:2021-02-04
Information query
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