Invention Grant
- Patent Title: Delay circuit and delay structure
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Application No.: US17405110Application Date: 2021-08-18
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Publication No.: US11451219B2Publication Date: 2022-09-20
- Inventor: Weibing Shang , Anping Qiu , Chan Chen , Kangling Ji
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202010985337.8 20200918
- Main IPC: H03K5/134
- IPC: H03K5/134 ; H03K5/00

Abstract:
A delay circuit and a delay structure are provided. The circuit includes: a first delay unit configured to delay a rising edge and/or a falling edge of a pulse signal, where, an input terminal of the first delay unit receives the pulse signal, and an output terminal of the first delay unit outputs a first delay signal, and a second delay unit, configured to delay the first delay signal, where an input terminal of the second delay unit is connected to the output terminal of the first delay unit, and an output terminal of the second delay unit outputs a second delay signal.
Public/Granted literature
- US20220094344A1 DELAY CIRCUIT AND DELAY STRUCTURE Public/Granted day:2022-03-24
Information query
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