Invention Grant
- Patent Title: Substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
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Application No.: US16625569Application Date: 2018-06-14
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Publication No.: US11454878B2Publication Date: 2022-09-27
- Inventor: Hirofumi Kozakai , Takahiro Onoue
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JPJP2017-121485 20170621
- International Application: PCT/JP2018/022756 WO 20180614
- International Announcement: WO2018/235721 WO 20181227
- Main IPC: H01L21/44
- IPC: H01L21/44 ; G03F1/24 ; G03F1/58 ; H01L21/033
Abstract:
Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).
Public/Granted literature
Information query
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