- Patent Title: Semiconductor integrated circuit and semiconductor storage device
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Application No.: US17121231Application Date: 2020-12-14
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Publication No.: US11456023B2Publication Date: 2022-09-27
- Inventor: Yutaka Shimizu , Satoshi Inoue , Isao Fujisawa , Yumi Takada
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-079147 20200428
- Main IPC: G11C11/08
- IPC: G11C11/08 ; G11C7/10

Abstract:
There is provided a semiconductor integrated circuit including an input circuit. The input circuit includes a first amplifier and a second amplifier. The second amplifier is electrically connected to the first amplifier. The second amplifier includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a time constant providing circuit. The first transistor has a gate electrically connected to a first node of the first amplifier. The second transistor has a gate electrically connected to a second node of the first amplifier. The third transistor is disposed adjacent to a drain of the first transistor. The fourth transistor is disposed adjacent to a drain of the second transistor. The time constant providing circuit is electrically connected between a gate of the third transistor and a drain of the third transistor, a gate of the fourth transistor.
Public/Granted literature
- US20210335401A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2021-10-28
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