- Patent Title: Methods for forming semiconductor device having uniform fin pitch
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Application No.: US16928267Application Date: 2020-07-14
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Publication No.: US11456179B2Publication Date: 2022-09-27
- Inventor: Min Gyu Sung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: KDB Firm PLLC
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/8234 ; H01L21/308
Abstract:
Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.
Public/Granted literature
- US20220020593A1 METHODS FOR FORMING SEMICONDUCTOR DEVICE HAVING UNIFORM FIN PITCH Public/Granted day:2022-01-20
Information query
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