Invention Grant
- Patent Title: Manufacturing method for semiconductor device
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Application No.: US17253727Application Date: 2019-03-27
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Publication No.: US11456215B2Publication Date: 2022-09-27
- Inventor: Ryota Mita , Tomoaki Ichikawa
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2018-120436 20180626
- International Application: PCT/JP2019/013142 WO 20190327
- International Announcement: WO2020/003663 WO 20200102
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L23/00

Abstract:
A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.
Public/Granted literature
- US20210193523A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2021-06-24
Information query
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