An array of through-silicon via (TSV) structures is formed through a silicon substrate, and package-side metal pads are formed on backside surfaces of the array of TSV structures. The silicon substrate is disposed over a carrier substrate, and an epoxy molding compound (EMC) interposer frame is formed around the silicon substrate. A die-side redistribution structure is formed over the silicon substrate and the EMC interposer frame, and at least one semiconductor die is attached to the die-side redistribution structure. The carrier substrate is removed from underneath the package-side metal pads. A package-side redistribution structure is formed on the package-side metal pads and on the EMC interposer frame. Overlay tolerance between the package-side redistribution wiring interconnects and the package-side metal pads increases due to increased areas of the package-side metal pads.