Invention Grant
- Patent Title: Semiconductor device and fabrication method for the same
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Application No.: US16440376Application Date: 2019-06-13
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Publication No.: US11456247B2Publication Date: 2022-09-27
- Inventor: Li-Han Lu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L21/311 ; H01L21/768
Abstract:
A reliable semiconductor device is provided. The semiconductor device includes at least one die. The at least one die includes an integrated circuit region, a first recess region surrounding the integrated circuit region, and a second recess region surrounding the first recess region. A first recess is disposed in the first recess region and a second recess is disposed in the second recess region.
Information query
IPC分类:
