Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US16909975Application Date: 2020-06-23
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Publication No.: US11456285B2Publication Date: 2022-09-27
- Inventor: Toshio Denta , Masanori Tanaka
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2019-155928 20190828
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L25/18 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L25/00 ; H01L21/48 ; H01L23/367

Abstract:
A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set. The semiconductor device further includes a plurality of semiconductor elements provided on the plurality of circuit patterns in the element region, a plurality of main terminals that each have a first end joined to one of the plurality of circuit patterns in the element region and a second end extending out of the substrate from a first side of the substrate, a plurality of control terminals disposed in a control region that is adjacent to a second side of the substrate opposite the first side, and a sealing member that seals the principal surface and the control region.
Public/Granted literature
- US20210066258A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-03-04
Information query
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