Invention Grant
- Patent Title: External-cavity semiconductor laser
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Application No.: US16849307Application Date: 2020-04-15
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Publication No.: US11456574B2Publication Date: 2022-09-27
- Inventor: Tetsushi Takano , Hisashi Ogawa , Hidetoshi Katori , Masao Takamoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JPJP2019-077969 20190416
- Main IPC: H01S5/14
- IPC: H01S5/14 ; H01S5/028 ; H01S5/323 ; H01S3/06 ; H01S3/08

Abstract:
An external-cavity semiconductor laser includes a semiconductor laser element containing a gallium nitride material, a first lens disposed in an optical path of light emitted from the semiconductor laser element, a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength, a second lens disposed in an optical path of light transmitted through the wavelength selective element, an output coupler disposed in an optical path of light condensed through the second lens, and a light-transmissive protective member bonded to at least one surface of the output coupler. The second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a surface of the output coupler. The protective member covers the surface of the output coupler on which the image is formed.
Public/Granted literature
- US20200335941A1 EXTERNAL-CAVITY SEMICONDUCTOR LASER Public/Granted day:2020-10-22
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