Invention Grant
- Patent Title: Electrostatic protection circuit and semiconductor device including the same
-
Application No.: US17209806Application Date: 2021-03-23
-
Publication No.: US11456595B2Publication Date: 2022-09-27
- Inventor: Janghoo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0124475 20200925
- Main IPC: H02H9/02
- IPC: H02H9/02 ; H01L27/02 ; H02H9/04 ; G06F3/06

Abstract:
An electrostatic protection circuit includes first and second diodes, a resistor and a capacitor, an inverter configured to invert a signal to output an inverted signal to a gate-coupled transistor, a first switch configured to block a first leakage current from flowing through a pull-up driver in response to the inverted signal, and a second switch configured to block a second leakage current from flowing through a pull-down driver in response to the signal.
Public/Granted literature
- US20220102968A1 ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2022-03-31
Information query