Invention Grant
- Patent Title: Measuring method and semiconductor structure forming method
-
Application No.: US16996828Application Date: 2020-08-18
-
Publication No.: US11460290B2Publication Date: 2022-10-04
- Inventor: Pradip Girdhar Chaudhari , Che-Hui Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G01B7/30
- IPC: G01B7/30 ; G01B7/14 ; C23C14/35

Abstract:
A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.
Public/Granted literature
- US20210095950A1 MEASURING METHOD AND SEMICONDUCTOR STRUCTURE FORMING METHOD Public/Granted day:2021-04-01
Information query