Invention Grant
- Patent Title: Device analysis apparatus and device analysis method
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Application No.: US16624008Application Date: 2018-04-18
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Publication No.: US11460497B2Publication Date: 2022-10-04
- Inventor: Toru Matsumoto , Koichi Endo , Tomonori Nakamura , Kazushige Koshikawa
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2017-127304 20170629
- International Application: PCT/JP2018/016039 WO 20180418
- International Announcement: WO2019/003599 WO 20190103
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device, including an application unit that applies a voltage signal to the power semiconductor device, a light detection unit that detects light from the power semiconductor device at a plurality of detection positions and outputs detection signals based on detection results, and a determination unit that determines the quality of the power semiconductor device based on temporal changes of the detection signals.
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