Invention Grant
- Patent Title: Positive resist composition and patterning process
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Application No.: US16717022Application Date: 2019-12-17
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Publication No.: US11460772B2Publication Date: 2022-10-04
- Inventor: Jun Hatakeyama , Masaki Ohashi
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JPJP2018-244436 20181227
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/039 ; G03F7/20 ; C08L33/08 ; C08L33/14 ; C08L25/06 ; C07D333/76 ; C07C381/12
Abstract:
A positive resist composition comprising a base polymer comprising recurring units containing an optionally substituted amino group and iodine exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.
Public/Granted literature
- US20200209747A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2020-07-02
Information query
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