Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17168285Application Date: 2021-02-05
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Publication No.: US11461261B2Publication Date: 2022-10-04
- Inventor: Teruo Takagiwa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-042795 20200312
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G06F13/40 ; G06F13/16 ; G11C16/04

Abstract:
According to one embodiment, a semiconductor memory device includes a first string including a first memory cell transistor and a second memory cell transistor which are coupled in series, a first switch element, a first latch circuit coupled in series between a first end of the first string and a first end of the first switch element, and a second switch element and a third switch element coupled in parallel between a second end of the first switch element and a data bus.
Public/Granted literature
- US20210286746A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-09-16
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