Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US16957347Application Date: 2019-12-17
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Publication No.: US11462416B2Publication Date: 2022-10-04
- Inventor: Miyako Matsui , Kenichi Kuwahara , Tatehito Usui , Hiroyuki Kobayashi
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Tech Corporation
- Current Assignee: Hitachi High-Tech Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: WOPCT/JP2019/003817 20190204
- International Application: PCT/JP2019/049420 WO 20191217
- International Announcement: WO2020/122259 WO 20200618
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01J37/32
Abstract:
Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.
Public/Granted literature
- US20200335354A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2020-10-22
Information query
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