- Patent Title: Electrically programmable fuse structure and semiconductor device
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Application No.: US17007220Application Date: 2020-08-31
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Publication No.: US11462473B2Publication Date: 2022-10-04
- Inventor: Main-Gwo Chen
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Anhui
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN201810189694.6 20180308
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/525 ; G11C17/16

Abstract:
An electrically programmable fuse structure and a semiconductor device are disclosed. The electrically programmable fuse structure comprises a cathode, a fuse link and an anode, the fuse link connecting the cathode to the anode, the cathode connected to the fuse link at a junction, wherein the cathode comprises a plurality of conductive branches arranged to form a converging side and a diverging side, and the converging side of the cathode is connected to the junction so as to be connected to the fuse link.
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