According to one embodiment, a semiconductor storage device includes a first structural body on a semiconductor material. The first structural body having a plurality of first conductive films and a plurality of first insulating films that are alternately stacked. A first columnar body penetrates the first structural body and includes a first epitaxial layer on an end adjacent to the semiconductor material. A second columnar body also penetrates the first structural body and includes a second epitaxial layer on an end adjacent to the semiconductor material. A portion of the second epitaxial layer is doped with boron.