Invention Grant
- Patent Title: Image device and fabricating method thereof
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Application No.: US16926897Application Date: 2020-07-13
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Publication No.: US11462577B2Publication Date: 2022-10-04
- Inventor: Kyu Min Lee , Ju-Eun Kim , Soo Jin Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0160452 20191205
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.
Public/Granted literature
- US20210175266A1 IMAGE DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2021-06-10
Information query
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