Invention Grant
- Patent Title: Switch device, storage apparatus, and memory system incorporating boron and carbon
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Application No.: US16975630Application Date: 2019-01-31
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Publication No.: US11462685B2Publication Date: 2022-10-04
- Inventor: Hiroaki Sei , Kazuhiro Ohba , Shuichiro Yasuda
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2018-037817 20180302
- International Application: PCT/JP2019/003426 WO 20190131
- International Announcement: WO2019/167538 WO 20190906
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/22 ; H01L27/24
Abstract:
A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.
Information query
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