Invention Grant
- Patent Title: Three-dimensional array architecture for resistive change element arrays and methods for making same
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Application No.: US16908277Application Date: 2020-06-22
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Publication No.: US11462686B2Publication Date: 2022-10-04
- Inventor: Harry Shengwen Luan , Thomas Rueckes
- Applicant: Nantero, Inc.
- Applicant Address: US MA Woburn
- Assignee: Nantero, Inc.
- Current Assignee: Nantero, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Nantero, Inc.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.
Public/Granted literature
- US20210399219A1 THREE-DIMENSIONAL ARRAY ARCHITECTURE FOR RESISTIVE CHANGE ELEMENT ARRAYS AND METHODS FOR MAKING SAME Public/Granted day:2021-12-23
Information query
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