Invention Grant
- Patent Title: Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer
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Application No.: US17124184Application Date: 2020-12-16
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Publication No.: US11469137B2Publication Date: 2022-10-11
- Inventor: Shay Reboh , Pablo Acosta Alba , Emmanuel Augendre
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1914563 20191217,FR1915019 20191219
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/763 ; H01L23/66 ; H01L27/12
Abstract:
A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.
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