Invention Grant
- Patent Title: Semiconductor device and high-frequency module
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Application No.: US16943243Application Date: 2020-07-30
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Publication No.: US11469187B2Publication Date: 2022-10-11
- Inventor: Hiroaki Tokuya , Masahiro Shibata , Akihiko Ozaki , Satoshi Goto , Fumio Harima , Atsushi Kurokawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-141341 20190731,JPJP2020-074812 20200420
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L27/082 ; H01L23/498 ; H01L23/66 ; H01L23/00
Abstract:
At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.
Public/Granted literature
- US20210035922A1 SEMICONDUCTOR DEVICE AND HIGH-FREQUENCY MODULE Public/Granted day:2021-02-04
Information query
IPC分类:
