Invention Grant
- Patent Title: Semiconductor device capable of realizing a wide band impedance matching
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Application No.: US16977855Application Date: 2019-03-06
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Publication No.: US11469192B2Publication Date: 2022-10-11
- Inventor: Masahiro Hirayama
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Yokohama
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Yokohama
- Agency: Oliff PLC
- International Application: PCT/JP2019/008935 WO 20190306
- International Announcement: WO2019/172332 WO 20190912
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/498 ; H01S5/026 ; H01S5/042 ; H01S5/024 ; H01L25/04

Abstract:
A 2nd signal line has impedance lower than impedance of a 1st signal line. A capacitor includes a 1st extension part and a 2nd extension part, a 1st ground part and a 2nd ground part. The 1st extension part and the 2nd extension part are connected to a 2nd signal line and are on an insulation substrate to extend along a longitudinal direction of the 2nd signal line. The 1st ground part and the 2nd ground part are at least a part of a ground pattern, and are between the 1st extension part and the 2nd extension part and the 2nd signal line, and between the 1st extension part and the 2nd extension part and an end part of the insulation substrate, to be electrically coupled with the 1st extension part and the 2nd extension part.
Public/Granted literature
- US20210028132A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-01-28
Information query
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