Invention Grant
- Patent Title: Semiconductor device and manufacturing method of a semiconductor device
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Application No.: US17091180Application Date: 2020-11-06
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Publication No.: US11469247B2Publication Date: 2022-10-11
- Inventor: In Su Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2018-0093830 20180810
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/76 ; H01L27/11582 ; H01L29/10 ; H01L29/417 ; H01L29/45 ; H01L27/11556 ; H01L27/24 ; H01L21/02 ; H01L21/311 ; H01L21/3213 ; H01L21/28
Abstract:
A semiconductor device includes a stack structure, a channel layer passing through the stack structure, a memory layer enclosing the channel layer and including first and second openings which expose the channel layer, a well plate coupled to the channel layer through the first opening, and a source plate coupled to the channel layer through the second opening.
Public/Granted literature
- US20210057447A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2021-02-25
Information query
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