Invention Grant
- Patent Title: Method of fabricating electronic devices comprising removing sacrificial structures to form a cavity
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Application No.: US17172956Application Date: 2021-02-10
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Publication No.: US11469249B2Publication Date: 2022-10-11
- Inventor: Darwin A. Clampitt , David H. Wells , John D. Hopkins , Kevin Y. Titus
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/02 ; H01L27/11519 ; H01L27/11521 ; H01L27/11556 ; H01L27/11565 ; H01L27/11568 ; H01L29/08 ; H01L29/10 ; H01L21/28 ; H01L29/66 ; H01L21/321 ; H01L29/45 ; H01L27/115 ; H01L27/11524 ; H01L27/1157 ; H01L21/82
Abstract:
A method of forming a semiconductor device comprises forming sacrificial structures and support pillars on a material. Tiers are formed over the sacrificial structures and support pillars and tier pillars and tier openings are formed to expose the sacrificial structures. One or more of the tier openings comprises a greater critical dimension than the other tier openings. The sacrificial structures are removed to form a cavity. A cell film is formed over sidewalls of the tier pillars, the cavity, and the one or more tier openings. A fill material is formed in the tier openings and adjacent to the cell film and a portion removed from the other tier openings to form recesses adjacent to an uppermost tier. Substantially all of the fill material is removed from the one or more tier openings. A doped polysilicon material is formed in the recesses and the one or more tier openings. A conductive material is formed in the recesses and in the one or more tier openings. An opening is formed in a slit region and a dielectric material is formed in the opening. Additional methods, semiconductor devices, and systems are disclosed.
Public/Granted literature
- US20210167087A1 ELECTRONIC DEVICES COMPRISING A SOURCE BELOW MEMORY CELLS AND RELATED SYSTEMS Public/Granted day:2021-06-03
Information query
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