Invention Grant
- Patent Title: SOT MRAM having dielectric interfacial layer and method forming same
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Application No.: US16806203Application Date: 2020-03-02
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Publication No.: US11469267B2Publication Date: 2022-10-11
- Inventor: Wilman Tsai , MingYuan Song , Shy-Jay Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; G11C11/16 ; H01L43/02
Abstract:
A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.
Information query
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