Invention Grant
- Patent Title: Techniques for MRAM top electrode via connection
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Application No.: US16930499Application Date: 2020-07-16
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Publication No.: US11469269B2Publication Date: 2022-10-11
- Inventor: Sheng-Chang Chen , Harry-Hak-Lay Chuang , Hung Cho Wang , Sheng-Huang Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01F10/32 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L43/12 ; H01F41/32 ; H01L23/532

Abstract:
Some embodiments relate to an integrated chip. The integrated chip includes a first memory cell overlying a substrate and a second memory cell overlying the substrate. A dielectric structure overlies the substrate. A trench extends into the dielectric structure and is spaced laterally between the first memory cell and the second memory cell. A dielectric layer is disposed within the trench.
Public/Granted literature
- US20200350366A1 TECHNIQUES FOR MRAM TOP ELECTRODE VIA CONNECTION Public/Granted day:2020-11-05
Information query
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