Invention Grant
- Patent Title: Method of controlling on-die termination and system performing the same
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Application No.: US17141357Application Date: 2021-01-05
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Publication No.: US11475930B2Publication Date: 2022-10-18
- Inventor: Young-Hoon Son , Si-Hong Kim , Chang-Kyo Lee , Jung-Hwan Choi , Kyung-Soo Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0066377 20170529,KR10-2017-0089692 20170714
- Main IPC: H03K19/003
- IPC: H03K19/003 ; G11C7/24 ; H03H7/38 ; G11C7/10

Abstract:
A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.
Public/Granted literature
- US20210233575A1 METHOD OF CONTROLLING ON-DIE TERMINATION AND SYSTEM PERFORMING THE SAME Public/Granted day:2021-07-29
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