Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure

Invention Grant

US11476124B2 Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure 有权

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Patent Title: Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure
Application No.: US17141882

Application Date: 2021-01-05
Publication No.: US11476124B2

Publication Date: 2022-10-18
Inventor: Ren-Kai Chen , Li-Chen Lee , Shun Wu Lin , Ming-Hsi Yeh , Kuo-Bin Huang
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Current Assignee Address: TW Hsinchu
Agency: WPAT, P.C., Intellectual Property Attorneys
Agent Anthony King
Main IPC: H01L21/3213
IPC: H01L21/3213 ; C09K13/10 ; C09K13/06 ; H01L29/45

Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure

Abstract:

A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

Public/Granted literature

US20220216066A1 ETCHANT FOR ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE AND METHOD OF ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE Public/Granted day:2022-07-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理
H01L21/3213	........对该层进行物理的或化学的腐蚀，例如由预沉积的外延层产生一个形成图形的层