Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US16125060Application Date: 2018-09-07
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Publication No.: US11476131B2Publication Date: 2022-10-18
- Inventor: Takashi Ozaki
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2017-172804 20170908
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01J37/32 ; C23C16/52 ; C23C16/44 ; H01L21/3065

Abstract:
There is provided a technique that includes: processing a substrate in a process vessel by supplying a processing gas to the substrate and exhausting the processing gas from an exhaust part including an exhaust pipe and a pump; cleaning an interior of the exhaust part by supplying a first cleaning gas from a supply port installed in the exhaust pipe directly into the exhaust pipe; and cleaning an interior of the process vessel by supplying a second cleaning gas into the process vessel, wherein a frequency of performing the act of cleaning the interior of the exhaust part is set higher than a frequency of performing the act of cleaning the interior of the process vessel.
Public/Granted literature
- US20190080936A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2019-03-14
Information query
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