A method for manufacturing a vertical transistor device includes forming a plurality of fins on a substrate, and forming a gate dielectric layer on the fins and on the substrate adjacent the fins. In the method, one or more sacrificial layers are formed on the gate dielectric layer, and portions of the gate dielectric layer and the one or more sacrificial layers are removed to define a plurality of gate regions. The method also includes depositing a dielectric fill layer in gaps left by the removed gate dielectric and sacrificial layers, and selectively removing the remaining portions of the one or more sacrificial layers to form a plurality of vacant areas in the gate regions. First and second gate structures are respectively formed in first and second vacant areas of the plurality of vacant areas. The first and second gate structures are recessed to a uniform height.