- Patent Title: Fabrication of embedded die packaging comprising laser drilled vias
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Application No.: US17065886Application Date: 2020-10-08
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Publication No.: US11476188B2Publication Date: 2022-10-18
- Inventor: Cameron McKnight-MacNeil
- Applicant: GaN Systems Inc.
- Applicant Address: CA Ottawa
- Assignee: GaN Systems Inc.
- Current Assignee: GaN Systems Inc.
- Current Assignee Address: CA Ottawa
- Agency: Miltons IP/p.i.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L21/56 ; H01L23/31

Abstract:
Embedded die packaging for semiconductor devices and methods of fabrication wherein conductive vias are provided to interconnect contact areas on the die and package interconnect areas. Before embedding, a protective masking layer is provided selectively on regions of the electrical contact areas where vias are to be formed by laser drilling. The material of the protective masking layer is selected to control absorption properties of surface of the pad metal to reduce absorption of laser energy during laser drilling of micro-vias, thereby mitigating overheating and potential damage to the semiconductor device. The masking layer is resistant to surface treatment of other regions of the electrical contact areas, e.g. to increase surface roughness to promote adhesion of package dielectric.
Public/Granted literature
- US20220115319A1 FABRICATION OF EMBEDDED DIE PACKAGING COMPRISING LASER DRILLED VIAS Public/Granted day:2022-04-14
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