Invention Grant
- Patent Title: Fin field effect transistor device structure and method for forming the same
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Application No.: US16744480Application Date: 2020-01-16
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Publication No.: US11476365B2Publication Date: 2022-10-18
- Inventor: Chia-Hung Chu , Sung-Li Wang , Fang-Wei Lee , Jung-Hao Chang , Mrunal Abhijith Khaderbad , Keng-Chu Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/45 ; H01L21/311 ; H01L29/417 ; H01L29/66 ; H01L21/8234 ; H01L21/308 ; H01L21/027 ; H01L21/3065 ; H01L21/762 ; H01L21/3105 ; H01L21/3213
Abstract:
A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The method also includes growing a source/drain epitaxial structure over the fin structure. The method also includes depositing a first dielectric layer surrounding the source/drain epitaxial structure. The method also includes forming a contact structure in the first dielectric layer over the source/drain epitaxial structure. The method also includes depositing a second dielectric layer over the first dielectric layer. The method also includes forming a hole in the second dielectric layer to expose the contact structure. The method also includes etching the contact structure to enlarge the hole in the contact structure. The method also includes filling the hole with a conductive material.
Public/Granted literature
- US20210226057A1 FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-07-22
Information query
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