Invention Grant
- Patent Title: Physical vapor deposition chamber with target surface morphology monitor
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Application No.: US16429187Application Date: 2019-06-03
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Publication No.: US11479849B2Publication Date: 2022-10-25
- Inventor: Hai-Dang Trinh , Chii-Ming Wu , Shing-Chyang Pan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: C23C14/54
- IPC: C23C14/54 ; G06N20/00 ; C23C14/35

Abstract:
A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.
Public/Granted literature
- US20200377997A1 PHYSICAL VAPOR DEPOSITION CHAMBER WITH TARGET SURFACE MORPHOLOGY MONITOR Public/Granted day:2020-12-03
Information query
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