Invention Grant
- Patent Title: 3D memory devices and structures with multiple memory levels
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Application No.: US17712875Application Date: 2022-04-04
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Publication No.: US11482541B2Publication Date: 2022-10-25
- Inventor: Zvi Or-Bach , Jin-Woo Han , Brian Cronquist
- Applicant: Monolithic 3D Inc.
- Applicant Address: US OR Klamath Falls
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US OR Klamath Falls
- Agency: Patent PC www.patentPC.com
- Agent Bao Tran
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; H01L25/065 ; H01L27/11587 ; H01L27/11519 ; H01L27/11556 ; H01L23/528 ; H01L27/11582 ; G11C16/14 ; G11C11/22 ; H01L23/522 ; H01L27/11565
Abstract:
A semiconductor device, the device including: a first level overlaid by a first memory control level; a first memory level disposed on top of said first control level, where said first memory level includes a first thinned single crystal substrate; a second memory level, said second memory level disposed on top of said first memory level, where said second memory level includes a second thinned single crystal substrate, where said memory control level is bonded to said first memory level, and where said bonded includes oxide to oxide and conductor to conductor bonding.
Public/Granted literature
- US20220231052A1 3D MEMORY DEVICES AND STRUCTURES WITH THINNED SINGLE-CRYSTAL SUBSTRATES Public/Granted day:2022-07-21
Information query
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