Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16963291Application Date: 2018-11-27
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Publication No.: US11482555B2Publication Date: 2022-10-25
- Inventor: Shin-ichiro Takagi , Yasuhito Yoneta , Masaharu Muramatsu , Nao Inoue , Hirokazu Yamamoto , Shinichi Nakata , Takuo Koyama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Rearh LLP
- Priority: JPJP2018-010709 20180125
- International Application: PCT/JP2018/043617 WO 20181127
- International Announcement: WO2019/146244 WO 20190801
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/146 ; H01L21/56 ; H01L23/31 ; H01L23/00
Abstract:
A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.
Public/Granted literature
- US20210057477A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-02-25
Information query
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