Invention Grant
- Patent Title: Light source for lithography exposure process
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Application No.: US17239826Application Date: 2021-04-26
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Publication No.: US11483918B2Publication Date: 2022-10-25
- Inventor: Chieh Hsieh , Shang-Chieh Chien , Chun-Chia Hsu , Bo-Tsun Liu , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G03F7/20

Abstract:
A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the operation of exciting the targets with the laser generator includes: irradiating a pre-pulse laser on the targets to expand the targets; detecting conditions of expanded targets; and adjusting at least one parameter of the laser generator according to the measured period of time and the conditions when the measured period of time is different from a predetermined value. The parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.
Public/Granted literature
- US20210243875A1 LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS Public/Granted day:2021-08-05
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