Invention Grant
- Patent Title: Method of making ohmic contact on low doped bulk silicon for optical alignment
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Application No.: US16950213Application Date: 2020-11-17
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Publication No.: US11485631B2Publication Date: 2022-11-01
- Inventor: Kuei-Sung Chang , Chia-Hua Chu , Shang-Ying Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/00

Abstract:
Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.
Public/Granted literature
- US20210070612A1 METHOD OF MAKING OHMIC CONTACT ON LOW DOPED BULK SILICON FOR OPTICAL ALIGNMENT Public/Granted day:2021-03-11
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