Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17068378Application Date: 2020-10-12
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Publication No.: US11489047B2Publication Date: 2022-11-01
- Inventor: Yasuhiro Okamoto , Nobuo Machida
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-210320 20191121
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/739 ; H01L29/423 ; H01L29/08 ; H01L29/417 ; H01L29/06
Abstract:
To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.
Public/Granted literature
- US20210159315A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-05-27
Information query
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