Methods for forming a coated component, along with the resulting coated components, are provided. The method may include forming a silicon-based bond coating on a surface of a substrate and forming a barrier coating on the silicon-based bond coating. The silicon-based bond coating comprises columnar grains of crystalline silicon. Chemical vapor depositing (CVD) may be used to form the silicon-based bond coating through CVD of a silicon-containing precursor at a deposition temperature and deposition pressure that causes crystallization of the silicon material during the deposition of the silicon-based bond coating. The silicon-containing precursor may be silane, monochlorosilane, dichlorosilane, and/or trichlorosilane.