Invention Grant
- Patent Title: Predicting failure parameters of semiconductor devices subjected to stress conditions
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Application No.: US17383776Application Date: 2021-07-23
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Publication No.: US11493548B2Publication Date: 2022-11-08
- Inventor: Moinuddin Ahmed , John N. Hryn , Christopher Stankus
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee Address: US IL Chicago
- Agency: Marshall, Gerstein & Borun LLP
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/26

Abstract:
A method for predicting failure parameters of semiconductor devices can include receiving a set of data that includes (i) characteristics of a sample semiconductor device, and (ii) parameters characterizing a stress condition. The method further includes extracting a plurality of feature values from the set of data and inputting the plurality of feature values into a trained model executing on the one or more processors, wherein the trained model is configured according to an artificial intelligence (AI) algorithm based on a previous plurality of feature values, and wherein the trained model is operable to output a failure prediction based on the plurality of feature values. Further, the method includes generating, via the trained model, a predicted failure parameter of the sample semiconductor device due to the stress condition.
Public/Granted literature
- US20220065919A1 Predicting Failure Parameters of Semiconductor Devices Subjected to Stress Conditions Public/Granted day:2022-03-03
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