Invention Grant
- Patent Title: Photonic semiconductor device and method of manufacture
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Application No.: US16930558Application Date: 2020-07-16
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Publication No.: US11493689B2Publication Date: 2022-11-08
- Inventor: Chen-Hua Yu , Hsing-Kuo Hsia , Kuo-Chiang Ting , Sung-Hui Huang , Shang-Yun Hou , Chi-Hsi Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G02B6/122
- IPC: G02B6/122 ; G02B6/12

Abstract:
A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.
Public/Granted literature
- US20210088723A1 PHOTONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2021-03-25
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