According to one embodiment, a nonvolatile memory device includes a plurality of wiring line pairs each including a pair of first and second wiring lines extending in a first direction, a plurality of third wiring lines each extending in a second direction intersecting the first direction, and a plurality of memory cells provided between the wiring line pairs and the third wiring lines. Each of the memory cells includes a resistance change memory element connected to the third wiring line, and a switching element structure including a first switching element portion provided between the resistance change memory element and the first wiring line, and a second switching element portion provided between the resistance change memory element and the second wiring line.