Invention Grant
- Patent Title: Semiconductor storage device
-
Application No.: US17348005Application Date: 2021-06-15
-
Publication No.: US11501830B2Publication Date: 2022-11-15
- Inventor: Takeshi Sugimoto , Atsushi Kawasumi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-152244 20200910
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C13/00

Abstract:
According to the embodiment, in a first period, the semiconductor storage device maintains the switch in an ON state. In a second period, the semiconductor storage device performs a first operation, a second operation and a third operation while maintaining the switch in an OFF state. The second period is a period after the first period. The first operation is an operation to supply the first pulse having the first polarity from the first pulse generation circuit to the other end of the first capacitive element. The second operation is an operation to supply the second pulse having the second polarity from the second pulse generation circuit to the other end of the second capacitive element. The third operation is an operation to connect the first bit line to the first data line.
Public/Granted literature
- US20220076743A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2022-03-10
Information query