The present disclosure provides a semiconductor structure having a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by the first dielectric layer; a second wafer including a second dielectric layer, a second substrate over the second dielectric layer, and a second conductive pad surrounded by the second dielectric layer; a bonding dielectric disposed between the first dielectric layer and the second dielectric layer to bond the first dielectric layer with the second dielectric layer; and a conductive via extending from the first conductive pad and surrounded by the bonding dielectric, the second conductive pad and the second wafer.