Invention Grant
- Patent Title: Semiconductor device package having galvanic isolation and method therefor
-
Application No.: US17190542Application Date: 2021-03-03
-
Publication No.: US11502068B2Publication Date: 2022-11-15
- Inventor: Burton Jesse Carpenter , Fred T. Brauchler
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/64 ; H01L23/00 ; H01L23/498

Abstract:
A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package substrate having a first inductive coil formed from a first conductive layer and a second inductive coil formed from a second conductive layer. The first conductive layer and the second conductive layer are separated by a non-conductive material. A first semiconductor die is attached to a first major side of the package substrate. The first semiconductor die is conductively interconnected to the first inductive coil. A second semiconductor die is attached to the first major side of the package substrate. A first wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.
Public/Granted literature
- US20220285330A1 SEMICONDUCTOR DEVICE PACKAGE HAVING GALVANIC ISOLATION AND METHOD THEREFOR Public/Granted day:2022-09-08
Information query
IPC分类: