Invention Grant
- Patent Title: 3D semiconductor device, structure and methods
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Application No.: US16649660Application Date: 2018-09-23
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Publication No.: US11502095B2Publication Date: 2022-11-15
- Inventor: Zvi Or-Bach , Jin-Woo Han , Brian Cronquist , Eli Lusky
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent PC www.patentPC.com
- Agent Bao Tran
- International Application: PCT/US2018/052332 WO 20180923
- International Announcement: WO2019/060798 WO 20190328
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; G11C5/02 ; G11C5/06 ; H01L23/538 ; H01L23/66 ; H01L27/11582

Abstract:
A 3D device, the device including: at least a first level including logic circuits; at least a second level including an array of memory cells; at least a third level including special circuits; and at least a fourth level including special connectivity structures, where the special connectivity structures include one of the following: a. waveguides, or b. differential signaling, or c. radio frequency transmission lines, or d. Surface Waves Interconnect (SWI) lines, and where the third level includes Radio Frequency (“RF”) circuits to drive the special connectivity structures, where the second level overlays the first level, where the third level overlays the second level, and where the fourth level overlays the third level.
Public/Granted literature
- US20210151450A1 3D SEMICONDUCTOR DEVICE, STRUCTURE AND METHODS Public/Granted day:2021-05-20
Information query
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