Invention Grant
- Patent Title: Active matrix substrate and method for manufacturing same
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Application No.: US17230041Application Date: 2021-04-14
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Publication No.: US11502115B2Publication Date: 2022-11-15
- Inventor: Masahiko Suzuki , Tetsuo Kikuchi , Setsuji Nishimiya , Kengo Hara , Hitoshi Takahata , Tohru Daitoh
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/12 ; H01L29/24 ; H01L29/786 ; H01L29/66 ; G02F1/1368 ; G02F1/1362

Abstract:
An active matrix substrate includes a substrate, a first gate bus line, a second gate bus line, a third gate bus line, a first source bus line, a second source bus line, a first pixel region, a second pixel region, and a first source contact portion. When viewed from a normal direction of the substrate, a first opening portion is located between the second gate bus line and the third gate bus line, and a first distance D1 in a column direction between the second gate bus line and the first opening portion and a second distance D2 in the column direction between the third gate bus line and the first opening portion are both ⅕ or more of a second interval Dy2 in the column direction between the second gate bus line and the third gate bus line.
Public/Granted literature
- US20210327923A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2021-10-21
Information query
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